Dr.S Parameshwara

Associate Professor & HoD

Department of Electronics & Communication Engineering

Email: param2004@nie.ac.in
Phone No: 9731139739
About Me:

I received my Ph.D. from University of Mysore, M.Tech. degree from VTU, Belagavi, and B.E. degree from UoM. My Ph.D. in the field of Nano-Science and Technology, developing organic field effect transistors for active-matrix display, sensor and Nano-electronics  device applications in collaboration with center for nano science and engineering (CeNSE), IISc., Bengaluru under Indian Nano User program. Also I have worked in BEL, Bengaluru in R&D flycatcher Radar and in Mysore Paper Mill, Bhadravathi in power electronics (SCR) controlled electrical machine-IV department as a design and maintains engineer. Having affection towards teaching, I have come back to teaching profession and now I am having more than 18 years teaching experience, teaching embedded system design related subjects and also guiding and involving in embedded system design related projects implementation. I went to Bologna Universty, Italy and visited countries France, Hungary, Austria, Germany for paper presentation as part of my research work.

  • B E (University of Mysore, Mysuru)
  • M. Tech (VTU, Belagavi)
  • Ph. D (University of Mysore, Mysuru)
Journal Publications
  1. S. Parameshwara, N. M. Renukappa and J. Sundara Rajan, “The effect of dielectric surface modification and heat-treatment on the performance of Rubrene based organic field-effect transistor”, International Journal of Nanoelectronics and Materials, ISSN (Print) 1985-5761 (Electronic) 2232-1535 for January 2019 Issue, (Vol 12, No. 1).
  2. S. Parameshwara and N. M. Renukappa, “Influence of interface structure on performance of organic field effect transistors”, International Journal of Nanotechnology, 14(9-11), pp. 775–792, 2017.
  3. Ranjith M S, S Parameshwara, “Optimizing Neural Networks for Embedded Systems”, International Research Journal of Engineering and Technology, 7(4), pp. 1034-1038, 2020.
  4. S. Parameshwara and N. M. Renukappa, “Simulation of top-contact Rubrene organic field effect transistor with SiO2and poly (methyl methacrylate) as gate dielectrics”, Indian Journal of Scientific Research, 12(1), pp. 464-469, 2015.
Conference Proceedings
  1.  Anupama S, S. Parameshwara, Prashanth G R, N. M. Renukappa and J. Sundara Rajan, “ Study of surface energy of SiO2 and TiO2 on charge carrier mobility of rubrene organic field effect transistor”, Proceedings of the 3rd International Conference of Theoretical and Applied Nanoscience and Nanotechnology (TANN'19), Ottawa, Canada – June, 2019
  2. S. Parameshwara and N. M. Renukappa, “Simulation of Organic Field Effect Transistor using LTspice”, IEEE International Conference on Electrical, Electronics, Computers, Communication, Mechanical and Computing (EECCMC), Priyadarshini Engineering College, Vaniyambadi, Tamil Nadu, India, January 28-29, 2018.
  3. S. Parameshwara and N.M. Renukappa, "Performance evaluation of top contact PANI Organic Thin Film Transistors with SiO2 and poly(methylmethacrylate) as gate dielectrics", IEEE International Conference on Solid Dielectrics, Bologna, Italy, Vol. 2, pp. 568-571, June 30 - July 4, 2013.
  4. S. Parameshwara and N. M. Renukappa, “Polyaniline Nano fiber based Field effect Transistor”, International Symposium on Advanced Materials for Engineering Applications, The National Institute of Engineering, Mysuru, March 24-25, 2017.
  5. S. Parameshwara and N. M. Renukappa, “Polyaniline Thin Film Transistors with SiO2 and Poly (methyl methacrylate) as Gate Dielectrics”, The first Indo-Canadian Symposium on Nano-Science and Technology, The National Institute of Engineering, Mysuru, Proc., pp. 70-76, February 20-21, 2013.
  6. S. Parameshwara and N. M. Renukappa, “Simulation study of dimensional parameters variation effect on organic field effect transistor performance”, National Conference on Novel Polymeric Materials, Sri Jayachamarajendra College of Engineering, Mysuru, September 15-16, 2017.
  7. S. Parameshwara and N. M. Renukappa, “Fabrication and Characterization of top contact Rubrene based Field Effect Transistors”, National Symposium on Nano science and technology (NSNST), pp. 57-58, CeNSE, IISc, Bengaluru, June 29-30, 2016.
UG Courses 
  • ARM processors
  • Digital System Design
  • Microcontrollers
  • Microprocessor Systems
  • Microwaves and Radar
  • Antennas and Wave Propagation